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Journal of Electron Microscopy 46(1): 33-43 (1997)
© 1997 Oxford University Press

Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation

Kuniyasu Nakamura, Hiroshi Kakibayashi, Keiichi Kanehori and Nobuo Tanaka1

Central Research Laboratory, Hitachi Ltd Kokubunji, Tokyo 185
1Department of Applied Physics, School of Engineering, Nagoya University Nagoya 464–01, Japan

A modified multislice method was applied to simulate high-angle annular dark field scanning transmission electron microscope (HAADF-STEM) images of a single Au atom embedded in Si(100) crystals. The minimum size of the electron probe in the optimum defocus condition was small enough to resolve (400) lattice planes of Si (d = 0.136 nrn) at 200 kV accelerating voltage. The Au atom had a high image contrast even if the thickness of Si crystals increased up to 54.2 nm. The Si-thickness dependence of the contrast of the Au atom located at the entrance surface was explained in terms of the reciprocal of the image intensity of Si-atomic column. When the Au atom was located at the exit surface, the contrast was strongly affected by the intensity-modification of the probe electrons due to the channelling along Si-atomic column. It was clarified that the intensity of the probe electrons mainly affects the image contrast when the Au atom was located at various depths in the Si crystals.

Keywords     high-angle annular dark field scanning transmission electron microscope (HAADF-STEM),, multislice image simulation,, single atom visibility. Au atom/Si crystal,, channelling effect,, thermal diffuse scattering (IDS).

Received     29 September 1996, accepted 15 October 1996


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