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Journal of Electron Microscopy 47(4): 311-317 (1998)
© 1998 Oxford University Press

Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS

Hideo Kohno1, Toshinobu Mabuchi1, Seiji Takeda1,*, Masanori Kohyama2, Masami Terauchi3 and Michiyoshi Tanaka3

1Department of Physics, Graduate School of Science, Osaka University 1–16 Machikaneyama, Toyonaka, Osaka 560–0043
2Department of Material Physics, Osaka National Research Institute 1-8-31 Midorigaoka, Ikeda, Osaka 564–1155
3Research Institute for Scientific Measurements, Tohoku University Sendai 980–8577, Japan

*To whom correspondence should be sent. Email: takeda{at}tem.phys.wani.osaka-u.ac.jp

We have found that the nanoscale defective structure of the {113} extended defect in silicon which consists of no dangling bond gives rise to the change of dielectric properties by means of high-resolution transmission electron energy-loss spectroscopy (HR-TEELS). The dielectric functions of nanoscale regimes were determined from the loss-functions by the Kramers-Kronig analysis. The peak in the imaginary part of the dielectric function {varepsilon}2 measured from the defective region shifts at 2.0–2.5 eV. We attribute the result to the nonvertical interband transitions between the localized defect states at the band edges and or the effect of the periodicity breakdown.

Keywords     EELS, extended defect, interband transition, JDOS, dielectric.function, abinitio calculation

Received     22 January 1998, accepted 19 May 1998


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