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Journal of Electron Microscopy 47(4): 319-324 (1998)
© 1998 Oxford University Press

Electron energy-loss spectroscopy study of the electronic structure of boron nitride nanotubes

Masami Terauchi*, Michiyoshi Tanaka, Takehisa Matsumoto1 and Yahachi Saito1

1Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University Tsu 514–8507, Japan
Research Institute for Scientific Measurements, Tohoku University Sendai 980–8577

*To whom correspondence should be addressed. E-mail: terauchi{at}rism.tohoku.ac.jp

Electron energy-loss spectra were obtained from single boron-nitride nanotubes (BNTs), which were synthesized by the arc-discharge method. The {pi} and {pi} + {sigma} plasmon energies of the BNTs were smaller than those of hexagonal boron-nitride (h-BN). The {pi} + {sigma} plasmon energy is explained by the surface plasmon excitation. Dielectric functions of the BNTs were derived from the loss functions by Kramers-Kronig analysis. The bandgap energy was obtained to be ~5 eV, which is smaller than that of h-BN of 5.8 eV, from the imaginary part of the dielectric function. Full width at half maximum (FWHM) value of the 1s -> {pi}* transition peak in boron K-shell excitation spectra was nearly the same as that of h-BN, whereas the FWHM value of the peak of carbon nanotubes was greater than that of graphite. No additional broadening of the peaks of the BNTs may be attributed to a weak interaction between the pz orbitals of adjacent boron and nitrogen atoms.

Keywords     High engergy-resolution EELS, boron nitride nanotube, {pi} plasmon, {pi} + {sigma} plasmon, bandgap energy, boron 1s -> {pi}* transition

Received     21 April 1998, accepted 26 May 1998


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