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Journal of Electron Microscopy 47(5): 477-488 (1998)
© 1998 Oxford University Press

EELS elemental mapping of a DRAM with FE-TEM

Masahiro Kawasaki1,*, Tetsuo Oikawa1, Katsuhiko Ibe1, Kyung-ho Park2 and Makoto Shiojiri3

1JEOL Ltd. Tokyo 196-8558, Japan
2Texas Instruments Inc. 13570 North Central Expressway, MS3740, Dallas, TX 75243, USA
3Kyoto Institute of Technology Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan

*To whom correspondence should be addressed. E-mail: kawasaki{at}jeol.co.jp

The elemental distribution in an oxide-nitride-oxide (O-N-O ) dielectric multi-layer in a dynamic random access memory (DRAM) device has been investigated by elemental mapping using an electron energy-loss spectrometer (EELS) combined with a field-emission (scanning) transmission electron microscope (FE-(S)TEM). The O-N-O layer is designed as an insulator between a single-crystal silicon substrate and a poly silicon capacitor. The nominal structure is an amorphous SiO2-Si3N4-SiO2 phase. Two different approaches, utilizing both EELS point analysis and energy-filtering transmission electron microscopy (EF-TEM), were made to construct the concentration profiles of low- and medium-atomic-number elements, N, O and Si. Further, the relative quantities of N, O and Si atoms were processed to calculate the theoretical contrast due to high-angle electron scattering from these atoms. The calculated contrast agreed fairly well with the experimental contrast obtained by high-angle annular dark-field (HAADF) STEM.

Keywords     EELS, energy-filtered mapping, FE-TEM, DRAM, quantitative analysis, HAADF STEM

Received     26 March 1998, accepted 16 July 1998


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