Skip Navigation

This Article
Right arrow Full Text (PDF)
Right arrow Alert me when this article is cited
Right arrow Alert me if a correction is posted
Services
Right arrow Email this article to a friend
Right arrow Similar articles in this journal
Right arrow Alert me to new issues of the journal
Right arrow Add to My Personal Archive
Right arrow Download to citation manager
Right arrow Search for citing articles in:
ISI Web of Science (2)
Right arrowRequest Permissions
Google Scholar
Right arrow Articles by Park, G.-S.
Right arrow Articles by Shindo, D.
Right arrow Search for Related Content
PubMed
Right arrow Articles by Park, G.-S.
Right arrow Articles by Shindo, D.
Social Bookmarking
Add to CiteULike   Add to Connotea   Add to Del.icio.us  
What's this?

Journal of Electron Microscopy 48(3): 183-190 (1999)
© 1999 Oxford University Press

High-voltage, high-resolation electron microscopy study on thin sections of phase change optical disk prepared by anultramicrotome

Gyeong-Su Park1,*, Hyeon-Change Hong2, Jun-Mo Yang3 and Daisuke Shindo3

1Samsung Advanced Institute of Technology San 14–1, Nong-Seo Ri, Ki-Hung Uebm Yong-In Gun, Kyung-Ki Do, 449–900, Korea
2DVD R&D Center, Samsung Electronics Co., Ltd 416, Mae-Tan 3 Dong, Pal-Dal Gu, Su-Won City, Kyung-Ki Do, 441–742, Korea
3Institute for Advanced Materials Processing, Tohoku University Katahira 2–1–1, Aobaku, Sendai, 980–5877, Japan

*To whom correspondence should be addressed.E-mail: gspark{at}saitgw.sait.samsung.co.ke

Thin cross-sections of a phase change optical disk were prepared by ultramicrotomy without embedding of the resin. Transmission electron microscope images of the thin sections directly show the constitution of the phase change optical disk, that is, the coating layer (UV resin: 2.05 µm), the reflective layer (Al: 90 nm), the upper dielectric layer (ZnSµSiO2: 37 nm), the recording layer (Ge2Sb2Te5: 20 nm) and the bottom dielectric layer (ZnSSiO2: 160 nm) on the pre-grooved polycarbonate substrate. Its structure on an atomic scale is analysed by high-voltage, high-resolution electron microscopy. Moreover, it is found that the characteristic of the phase change of the optical disk is attributed to the GeTe intermetallic compound of the recording layer formed during the initializing process.

Keywords     phase change optical disk, ultramicrotomy, high-resolution electron microscopy, recording layer, Ge2Sb2Te5, GeTe intermetallic compound

Received     30 April 1998, accepted 12 November 1998


Add to CiteULike CiteULike   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us    What's this?




Disclaimer: Please note that abstracts for content published before 1996 were created through digital scanning and may therefore not exactly replicate the text of the original print issues. All efforts have been made to ensure accuracy, but the Publisher will not be held responsible for any remaining inaccuracies. If you require any further clarification, please contact our Customer Services Department.