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Journal of Electron Microscopy 48(3): 221-233 (1999)
© 1999 Oxford University Press

Application of the CBED method for the determination of lattice parameters of cubic Sic films on 6H SiC substrates

Ute Kaiser*, Koh Saitoh1, kenji Tsuda1 and Michiyoshi Tanaka1

Institute für Festk¨operphysik, Friedrich-5chiller University D-07743Jena, Germany
1Research Institue for Scientific Measurements, Tohoku University Sendai 980–8577, Japan

To whom correspondence should be addressed.E-mail: kaiser{at}pinet.uni.jena.de

Many-beam Bloch wave CBED pattern simulation is used to determine the lattice parameter of thin cubic SiC films on 6H SiC substrates from experimental on-axis CBED patterns at zones showing lattice parameter change sensitive HOLZ line shifts. Experiments are carried out at [320] and [331] zone axes. The agreement of three ratios between defined HOLZ lines in each zone axis pattern ensures a lattice parameter determination with high accuracy. For two SiC layers the lattice parameters are determined with an accuracy of 0.0001 nm to be 0.4374 nm and 0.4369 nm. Their significant differences are addressed to the different growth parameters resulting in differently strained layers. The values determined are up to 0.4% higher than X-ray data of bulk material. The strain in the thin film may be one main reason for the difference. From experiments at both liquid nitrogen and room temperature the linear thermal expansion of the layers has been determined to be (6.7±0.2)×10"6/K.

Keywords     convergent beam electron diffraction, lattice parameter, cubic SiC

Received      8 October 1998, accepted 15 February 1998


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A. Chuvilin, U. Kaiser, Q. de Robillard, and H.-J. Engelmann
On the origin of HOLZ lines splitting near interfaces: multislice simulation of CBED patterns
J. Electron Microsc. (Tokyo), December 1, 2005; 54(6): 515 - 517.
[Abstract] [Full Text] [PDF]


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