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Journal of Electron Microscopy 48(5): 503-509 (1999)
© 1999 Oxford University Press

Xe precipitates at grain boundaries in Al under 1 MeV electron irradiation

Charles W. Allen1,*, Minghui Song2, Kazuo Furuya2, Robert C. Birtcher1, Kazutaka Mitsuishi2 and Ulrich Dahmen3

1Argonne National Laboratory Argonne, IL 60439 USA
2National Research Institute for Metals Tsukuba, Ibaraki 305-0003, Japan
3Lawrence Berkeley National Laboratory Berkeley, CA 94720, USA

*To whom correspondence should be addressed. E-mail: allen{at}aaem.amc.anl.gov

Crystalline nanoprecipitates of Xe have been produced by ion implantation into mazed bicrystalline Al at 300 K, in which the matrix grain boundaries are mainly 90° tilt boundaries. Within Al grains, Xe nanocrystals are fcc, isotactic with the Al and cuboctohedral in shape with {111} and {l00} facets. With an off-axial imaging technique, the nanocrystals were structure imaged against a relatively featureless matrix background. In contrast to metal precipitates in Al, such as Pb, Xe precipitates straddling a matrix grain boundary are bicrystals as small as approximately 2 nm in diameter. Larger Xe precipitates tend to avoid boundaries that are inclined away from asymmetrical orientation and which have a significant twist component. Under the 1 MeV electron irradiation employed for HREM observation, small Xe nanocrystals near a grain boundary may migrate to the boundary and coalesce with other Xe precipitates. The structural observations are rationalized on a simple geometrical interpretation.

Keywords     high-resolution eletron microscopy, Al mazed bicrystal, Xe precipitate, grain boundary, irradiation

Received     16 October 1998, accepted 6 May 1999


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