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Journal of Electron Microscopy 48(5): 545-554 (1999)
© 1999 Oxford University Press

A TEM study of local non-uniformities in epitaxial 2H-AIN films on Si(111) substrate

Ute Kaier1,*, I. I. Khodos2, J. Jinschek1 and W. Richter1

1Institut fär Festkörperphysik, Friedrich-Schiller Universität D-07743 Jena, Germany
2Institut of Microelectronics Technology and High Purity Materials RAS 142432 Chernogolovka, Russia

*To whom correspondence should be addressed. E mail: kaiser{at}pinet.uni-jena.de

Various non-uniformities of AlN thin films grown epitaxially on Si(111) substrates by plasma-assisted molecular beam epitaxy (MBE) are characterised by a combination of transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), convergent-beam electron diffraction (CBED), and secondary ion mass spectrometry (SIMS). Their appearance is interpreted in relation to main growth parameters such as substrate temperature, nucleation temperature and the flux rate ratio of Al/N. It has been proved that all films investigated are hexagonal and do not contain cubic AlN. We demonstrate that the creation of hillocks inside the layer of voids in the substrate and of crystals on top of the AlN film are closely connected with each other and depend mainly on the Al/N flux rate ratio. Domains of different polarity were found when increasing the nudeation temperature.

Keywords     transmission electron microscopy, EDX, defect structure, AlN layer, Si substrate

Received     19 February 1999, accepted 15 June 1999


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