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Journal of Electron Microscopy 48(5): 581-584 (1999)
© 1999 Oxford University Press

Chemical disordering and crystalline-to-amorphous transition induced by MeV electron irradiation in GaAs

H. Yasuda and H. Mori

Research Center for Ultra-High Voltage Electron Microscopy, Osaka University Yamadaoka, Suita, Osaka 565–0871, Japan. E-mail: yasuda{at}uhvem.osaka-u.ac.jp

Single crystals of GaAs were irradiated with 2 MeV electrons in an ultrahigh-voltage electron microscope. Electron irradiation at 20 K first induces chemical disordering and with continued irradiation a crystalline-to-amorphous (C-A) transition takes place. The chemical disordering becomes more difficult to occur with increasing irradiation temperature, and as a result of this the C-A transition is completely suppressed.

Keywords     UHVEM, electron-irradiation-induced phase transition, non-equilibrium solid phase, GaAs

Received     16 February 1999, accepted 7 April 1999


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