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Journal of Electron Microscopy 48(5): 609-611 (1999)
© 1999 Oxford University Press

Formation of amorphous zones along the crack of poly-silicon film during straining experiment intransmission microscope

M. Takeda, S. Ohnuki*,, P. R. Okamoto1 and N. Q. Lam1

Department of Materials Engineering, Hokkaido University Kita- 13, Nishi-8, Kita-ku, Sapporo 060–8628, Japan
1Materials science Division, Argonne National Laboratory Argonne, IL 60439, USA

*To whom correspondence should be addressed. E-mail: ohnuki{at}loam-ms.eng.hokudai.ac.jp

An ‘in-situ’ straining experiment has been carried out to clarify the propagation process of a crack tip in poly-crystalline film of silicon. After rapid propagation of cracks, the band structure with half-toned contrast is observed on the edge of the crack, which is a deformation-induced amorphous zone. The amorphous zone is 40–90 nm in width and includes fine crystalline particles of 0.8 nm in size. From those results, the local amorphization process and the possible fracture mechanism are discussed.

Keywords     poly-Si, crack tip, stress-induced amorphization

Received     29 March 1999, accepted 3 July 1999


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