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Journal of Electron Microscopy 49(1): 157-162 (2000)
© 2000 Oxford University Press

Static capacitance contrast of LSI covered with an insulator film in low accelerating voltage scanning electron microscope

Katsumi Ura1 and Sadao Aoyagi2

1Osaka Sangyou University Nakagaito Daitou, Osaka, 574-0013
2JEOL, Musashino Akishima, Tokyo, 196-8558, Japan

A new image contrast is reported for LSIs covered with an insulator film in a low accelerating voltage scanning electron microscope. The surface region above the conducting lines is often observed brighter than that without conducting lines. This contrast is quasi-stationarily observed contrary to wellknown capacitive-coupled voltage contrast, and is called static capacitance contrast. The optimum irradiation conditions for the maximum image contrast is studied and its mechanism is discussed.

Keywords     re-distribution of secondary electrons, passivated LSI, low accelerating voltage scanning electron microscope

Received      3 August 1999, accepted 9 November 1999


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