Journal of Electron Microscopy 50:517-521 (2001)
© 2001 Oxford University Press
Paper |
Artificial bright spots in atomic-resolution high-angle annular dark field STEM images
Hashimoto Laboratory, Department of Physics, Science University of Tokyo, Shinjuku-ku Tokyo 162-8601
JEOL USA Inc., 11 Dearborn Rd., Peabody, MA 01960, USA
Tokyo Metropolitan College of Technology, Shinagawa-ku, Tokyo 140-0011
Department of Anatomy, Kanazawa Medical University, Ishikawa 920-0293
Kyoto Institute of Technology, Kyoto 606-8585, Japan
Artificial bright spots, which appear in some atomic resolution high-angle annular dark field scanning transmission electron microscope (HAADF STEM) images, have been accounted for by simulations based on Bloch wave description. This is illustrated with Si and SrTiO3 images. The simulation reveals that bright spots on no-atomic columns in [011]-orientated Si images are produced by thermal diffuse scattering from Si atoms on their surrounding atomic columns, which are under the subsidiary peaks in the incident convergent electron probe. Similarly, bright spots on oxygen columns in [001]-orientated SrTiO3 images are ascribed to Sr and Ti atoms in their surrounding atomic columns rather than O atoms in the O columns. The probe function, therefore, provides a simple explanation for the appearance of these artificial spots.
Keywords HAADF STEM, Si, SrTiO3, artificial bright spot, Bethe method
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