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Journal of Electron Microscopy 50:523-528 (2001)
© 2001 Oxford University Press

Paper

Spatially-resolved EELS analysis of multilayer using EFTEM and STEM

Koji Kimoto, Shigeto Isakozawa, Takashi Aoyama and Yoshio Matsui

Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044
Instrument Division, Hitachi, Ltd, Ichige 822, Hitachinaka, Ibaraki 321-8504
Hitachi Research Laboratory, Hitachi, Ltd, Ohmika 7-1-1, Hitachi, Ibaraki 319-1292, Japan

Spatially-resolved electron energy-loss spectroscopy (EELS) is applied to the multilayer (SiO2/Si3N4/SiOxNy/Si), a common semiconductor device structure. To observe depth profile at sub-nanometre spatial resolution, scanning transmission electron microscopy (STEM) and energy-filtering transmission electron microscopy (EFTEM)-based techniques are compared in practical application. STEM-based EELS is useful in simultaneously analysing plural elements. EFTEM-based EELS is suitable for analysing the chemical shift and core loss intensity of single element. The practical spatial resolution is of the same order for each technique, both involving beam damage, which can be reduced by decreasing current density in EFTEM and avoiding beam overlapping in STEM.

Keywords     spatially-resolved EELS, spectrum imaging, energy-filtering TEM, scanning transmission electron microscopy, multilayer


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