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Journal of Electron Microscopy 50:545-548 (2001)
© 2001 Oxford University Press

Letter

Reactive epitaxy of Co nanoparticles on (111) Si

Mark Yeadon, Claus G. Zimmermann, Robert S. Averback and J. Murray Gibson

Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 and Department of Materials Science, National University of Singapore, Singapore 119260
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA

The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5–50 nm were synthesized by sputtering of a high purity Co target inside a ultra high vacuum (UHV) sputtering chamber, using the technique of inert gas condensation. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing, the particles reacted with the Si substrate to form epitaxial CoSi2. Our observations were made using a JEOL 200CX transmission electron microscope modified for in situ sputtering and UHV conditions.

Keywords     in-situ TEM, nanoparticles, reactive epitaxy, inert gas condensation, cobalt silicide


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