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Journal of Electron Microscopy 51:105-112 (2002)
© 2002 Oxford University Press

Investigation of the charge on threading edge dislocations in GaN by electron holography

Chengge Jiao and David Cherns *

H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK

*To whom correspondence should be addressed. E-mail: d.cherns{at}bristol.ac.uk

We present direct evidence for the charging around end-on threading edge dislocations in n-type GaN doped with silicon by off-axis electron holography in a transmission electron microscope. It is shown that the inner potential is reduced by up to 2.5 V within 10 nm of the dislocation, consistent with a negatively charged core. The results, which can be fitted with an unscreened potential, are consistent with a line charge of about 2 electrons/c, where c = 0.52 nm is the unit cell parameter of GaN. The origin of this line charge is discussed. The application of the method to other types of dislocation is also considered.

Keywords     electron holography, transmission electron microscopy, GaN, thin film, semi-conducting III-V materials, dislocation


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