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Journal of Electron Microscopy 51:93-98 (2002)
© 2002 Oxford University Press

Recrystallization by annealing in SiC amorphized with Ne irradiation

Jun Aihara 1,* , Kiichi Hojou2, Shigemi Furuno2, Masahiro Ishihara1 and Kimio Hayashi1

1Japan Atomic Energy Research Institute, Oarai-machi, Higashi-ibaraki-gun, Ibaraki-ken 311-1394, and 2Japan Atomic Energy Research Institute, Tokai-mura Naka-gun, Ibaraki-ken 319-1195, Japan

*To whom correspondence should be addressed. E-mail: aihara{at}sspl.tokai.jaeri.go.jp

{alpha}-Silicon carbide was irradiated with Ne+ ions at room temperature to various fluences up to 7.5 x 1020 Ne+ m-2 and then isochronally annealed under observation with a transmission electron microscope. In all cases, thin regions were completely amorphized by irradiation and epitaxial growth occurred from the residual crystalline region by subsequent annealing. Crystal nucleation occurred with annealing at 1000°C in the cases of 3.8 x 1020 and 7.5 x 1020 Ne+ m-2 irradiation, and at 1100°C in the cases of 1.3 x 1020 and 2.3 x 1020 Ne+ m-2 irradiation. Growth or formation of bubbles was observed with annealing at 1000°C after 1.3 x 1020, 2.3 x 1020, and 3.8 x 1020 Ne+ m-2 irradiation.

Keywords     Ne irradiated SiC, recrystallization, TEM, annealing, amorphization


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