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Journal of Electron Microscopy 51:S165-S169 (2002)
© 2002 Oxford University Press


Full-length paper

High-resolution electron microscopy of stacking faults in heteroepitaxial ZnO/LiTaO3

Sung-Hwan Lim1,* and Daisuke Shindo2

1Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA and
2Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

To whom correspondence should be addressed. E-mail: shlim{at}mrl.ucsb.edu

The structural analyses of the defects for ZnO films on (01&1macr;2) r-plane LiTaO3 substrate were carried out using electron diffraction, high-resolution electron microscopy (HREM), and image simulations. The epitaxial relationship was found to be [0001]ZnO||[0&1macr;11]LiTaO3 and (11&2macr;0)ZnO|| (01&1macr;2)LiTaO3. The dominant defects observed in the ZnO films were characterized as the type I1 intrinsic stacking faults with the displacement vector (a/6)[20&2macr;3], leading to a local zinc-blende structure in the wurtzite ZnO matrix. HREM studies show that stacking faults in the ZnO film may be formed to accommodate tilting of the films as required to maintain a particular epitaxial relationship with respect to the substrate.

Keywords     high-resolution electron microscopy, computer simulation, ZnO, stacking fault


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