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Journal of Electron Microscopy 51:S171-S174 (2002)
© 2002 Oxford University Press

Full-length paper

Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN

Sung-Hwan Lim, Jack Washburn and Zuzanna Liliental-Weber

Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

To whom correspondence should be addressed. E-mail: shlim{at}mrl.ucsb.edu

Structure of the interfacial layers of Ti/Ta/Al ohmic contacts to AlGaN/GaN/sapphire has been investigated by high-resolution electron microscopy (HREM). HREM, optical diffractograms, and image simulations showed that TiN (~10.0 nm) and Ti3AlN (~1.4 nm) interfacial layers form at the interface between the Ti layer and the AlGaN during the annealing. The cubic Ti3AlN layer has a lattice parameter of 0.411±0.003 nm with the space group Pm3m matching that of AlGaN. A model of the atomic arrangements of the Ti3AlN/Al0.35Ga0.65N interface is proposed. This model is supported by a good match between the simulated and the experimental image.

Keywords     high-resolution electron microscopy, image simulations, ohmic contacts, metallization, interfacial layers


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