Journal of Electron Microscopy 51:S195-S200 (2002)
© 2002 Oxford University Press
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Implantation of Au atoms into Al matrix by MeV electron irradiation
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamada-Oka 2-1, Suita, Osaka 565-0871, Japan
To whom correspondence should be addressed. E-mail: mori{at}uhvem.osaka-u.ac.jp
Electron-irradiation-induced implantation of gold (Au) atoms into aluminium (Al) matrix has been studied by ultrahigh-voltage electron microscopy. Under 2 MeV electron irradiation, knocking-off of Au atoms from a target Al2Au precipitate and subsequent implantation of Au atoms into the Al matrix takes place over a temperature range from 22 to 298 K. Gold atoms implanted into the matrix tend to form the Al2Au phase there, probably due to the extremely high stability of the phase. As a result of repetition of this process, the target Al2Au precipitate migrates as a whole in the Al matrix in the electron beam direction. Based upon the irradiation temperature dependence of implantation behaviour, the atomic process behind the implantation is discussed.
Keywords ultrahigh-voltage electron microscopy (UHVEM), irradiation-induced diffusion, implantation, intermetallic compound