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Journal of Electron Microscopy 51:S211-S214 (2002)
© 2002 Oxford University Press

Full-length paper

Dynamic process of nano-structured inert gas precipitates introduced with ion implantation in aluminium

Minghui Song, Kazutaka Mitsuishi, Hidehiro Yasuda and Kazuo Furuya

National Institute for Materials Science, Sakura 3-13, Tsukuba, Ibaraki 305-0003 Japan

To whom correspondence should be addressed. E-mail: Minghui.SONG{at}nims.go.jp

Inert gas ions of Xe, Ar and Ne were implanted into Al at room temperature in a transmission electron microscope (TEM). The growth processes and the structure of inert gas precipitates were studied with conventional and high-resolution TEM (CTEM and HRTEM). Implanted Xe ions begin to segregate to atomic clusters and crystalline precipitates at a dose of ~1.0x1018 ions m-2 at a flux of 3.0x1016 ions m-2 s-1. The smallest size of the crystalline precipitates is ~2.0 nm, observed with both the CTEM and HRTEM. The Xe precipitates have sizes ranging from ~2.0 to 10 nm in specimens implanted with Xe to a dose of 5x1019 ions m-2. The precipitates larger than ~6 nm are usually in a non-crystalline state, but the maximum size of crystalline precipitates also depends on the surrounding environment. Analysis of the growth dynamics of Xe, Ar and Ne precipitates suggests that super-saturation, dissolving of clusters and precipitates take place during the implantation, and that these processes make the growth of the precipitates dependent on the implanted dose in a non-linear way. The smaller the size of the implanted ion, the greater this tendency.

Keywords     aluminium, implantation, segregation, TEM, inert gas inclusions


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