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Journal of Electron Microscopy 2005 54(3):239-242; doi:10.1093/jmicro/54.3.239
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© The Author 2005. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oxfordjournals.org

Characterization of charging in semiconductor device materials by electron holography

Martha R. McCartney*

Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA

* E-mail: molly.mccartney{at}asu.edu

Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si–insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm–1, on the order of the breakdown voltage.

Keywords     electron holography, electrostatic potential, charging, semiconductor device, breakdown voltage

Received     28 January 2005, accepted 1 April 2005


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