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Journal of Electron Microscopy Advance Access originally published online on December 22, 2005
Journal of Electron Microscopy 2005 54(6):493-496; doi:10.1093/jmicro/dfi067
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Published by Oxford University Press on behalf of Japanese Society of Microscopy 2005.

Matrix-dependent structure of GeSi nanocrystals in SiC

Johannes Biskupek1,*, Ute Kaiser1 and Konrad Gärtner2

1 Electron Microscopy Group of Materials Science, University of Ulm 89069 Ulm, Germany
2 Institute of Solid State Physics, Friedrich Schiller University 07743 Jena, Germany

*To whom correspondence should be addressed. E-mail: johannes.biskupek{at}uni-ulm.de

It is shown experimentally that GeSi nanocrystals in SiC created after high-dose Ge ion implantation and high-temperature annealing are hexagonal in a hexagonal 4H-SiC matrix and are of cubic structure in a cubic 3C-SiC matrix. This interesting fact could be explained by molecular dynamics as the force of the system nanocrystal-matrix to minimize its interface energy.

Keywords     HRTEM, Molecular Dynamics, Nanocrystals, Silicon Carbide

Received      8 September 2005, accepted 17 November 2005


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