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Journal of Electron Microscopy 2005 54(supplement 1):i15-i19; doi:10.1093/jmicro/54.suppl_1.i15
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© The Author 2005. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oupjournals.org

Article

Electron transport in Si nanochains/nanowires

Hideo Kohno1,*, Isamu Kikuo1 and Kenichi Oto2

1 Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan and 2 Faculty of Science, Chiba University, 1-33 Yayoi, Inage, Chiba 263-8522, Japan

* To whom correspondence should be addressed. E-mail: kohno{at}phys.sci.osaka-u.ac.jp

Abstract

Electronic transport properties of a bundle of Si nanochains/nanowires were investigated. Si nanochains and nanowires were grown via a self-organized vapor–liquid–solid process and located on a pair of electrodes with a gap of several hundred nanometers. Unstable and a variety of current–voltage (I–V) characteristics were observed and some of those were Coulomb staircase-like. In addition, fluctuations which were seemingly random but partly and partially reproducible were observed in I–V curves of a parallel junction of a nanochain and a nanowire.

Keywords     Si nanochains, Si nanowires, I–V characteristics, energy-filtered TEM, Coulomb staircase, fluctuation

Received     21 July 2004, accepted 15 October 2004


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