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Journal of Electron Microscopy 2005 54(supplement 1):i25-i29; doi:10.1093/jmicro/54.suppl_1.i25
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© The Author 2005. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oupjournals.org

Article

Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy

Nobuhiko Ozaki1,2,*, Yutaka Ohno1, Jun Kikkawa1 and Seiji Takeda1

1 Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikane-yama, Toyonaka, Osaka 560-0043, Japan

* To whom correspondence should be addressed. E-mail: ozaki{at}ims.tsukuba.ac.jp

Abstract

We have studied the growth of silicon nanowires (SiNWs) by means of transmission electron microscopy. SiNWs are grown from nanocatalysts via the Vapor-Liquid-Solid (VLS) mechanism using silane (SiH4) gas as a source gas. The nanocatalysts are prepared on a hydrogen (H)-terminated Si surface. We have examined the formation mechanism of nanocatalysts on H-terminated surface and have observed several structural variants of SiNWs. According to the study we have suggested that many structural variations of SiNWs are possible, which modify the structural properties of SiNWs to great extents.

Keywords     silicon nanowires, nanocatalysts, H-terminated Si surface, structural variations of silicon nanowires, HRTEM, CL spectroscopy

Received      1 December 2004, accepted 15 December 2004


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