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Journal of Electron Microscopy 2005 54(supplement 1):i3-i7; doi:10.1093/jmicro/54.suppl_1.i3
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© The Author 2005. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oupjournals.org

Article

Electron-microscopic imaging of single-walled carbon nanotubes grown on silicon and silicon oxide substrates

Yoshikazu Homma1,3,*, Daisuke Takagi2, Satoru Suzuki1, Ken-ich Kanzaki1 and Yoshihiro Kobayashi1

1 NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi-shi, Kanagawa 243-0198 and 2 Department of Physics, Meiji University, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan

* To whom correspondence should be addressed. E-mail: homma{at}rs.kagu.tus.ac.jp

Abstract

Direct imaging of single-walled carbon nanotubes (SWNTs) suspended on pillar-patterned Si or SiO2 substrates is investigated using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The suspended nanotubes are successfully observed by direct TEM imaging and it is seen that they have either individual or bundles of SWNTs. Low energy (≤2 keV) SEM produces high contrast images of suspended SWNTs. On the contrary, when SWNTs contact a SiO2 substrate, they are imaged using electron-beam induced current. The image brightness depends on the length of SWNTs.

Keywords     single-walled carbon nanotubes, chemical vapour deposition, suspended growth

Received      4 August 2004, accepted 15 October 2004


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