Article |
Photoluminescence properties of CdS and CdMnS quantum dots prepared by a reverse-micelle method
Department of Applied Physics, Graduate School of Engineering, Osaka City University, Osaka 558-8585, Japan
* Author to whom correspondence should be addressed. E-mail: tegi{at}a-phys.eng.osaka-cu.ac.jp
Abstract
We have investigated photoluminescence properties of CdS and CdMnS quantum dots (QDs) prepared by a reverse-micelle method. Before the surface modification, a broad luminescence band that originates from defects is dominant in CdS QDs. By the modification, the intensity of the band-edge luminescence is remarkably increased. The surface modification also causes drastic changes of decay profiles of the band-edge luminescence. The intensity of Mn2+ luminescence originating from the intra-3d shell transition of Mn2+ is also increased by the surface modification of CdMnS QDs. The decay time of the band-edge luminescence in surface-modified CdMnS QDs is faster than that in CdS QDs, which is due to the energy transfer from excitons to Mn2+.
Keywords photoluminescence properties, CdS, CdMnS, quantum dots, reverse-micelle method, surface modification
Received 20 February 2004, accepted 15 October 2004