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Journal of Electron Microscopy 2005 54(supplement 1):i61-i64; doi:10.1093/jmicro/54.suppl_1.i61
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© The Author 2005. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oupjournals.org

Article

Ferromagnetism and Curie temperature of Vanadium-doped nitrides

Van An Dinh* and Hiroshi Katayama-Yoshida

Department of Condensed Matter Physics, Department of Computational Nanomaterials Design, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan

* To whom correspondence should be addressed. E-mail: divan{at}cmp.sanken.osaka-u.ac.jp

Abstract

Electronic structures, exchange interaction mechanism between magnetic ions and Curie temperature of Vanadium-doped nitrides (AlN, GaN, and InN) are studied within KKR-LSDA-CPA. It is found that the ferromagnetic super-exchange interaction mechanism is dominant at low concentrations of Vanadium, but the anti-ferromagnetic super-exchange interaction appears and reduces the stabilization of ferromagnetism at sufficiently high concentrations (x > 0.10), especially for Vanadium-doped AlN and Vanadium-doped GaN. The estimation of the Curie temperature within the mean field approximation shows the Curie temperature of Vanadium-doped nitrides exceeding room temperature with a few constituents of Vanadium.

Keywords     First principle calculation, materials design, spintronics, dilute magnetic semiconductors, nitrides

Received     27 February 2004, accepted 15 October 2004


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