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Journal of Electron Microscopy Advance Access originally published online on July 5, 2006
Journal of Electron Microscopy 2006 55(3):129-135; doi:10.1093/jmicro/dfl020
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© The Author 2006. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oxfordjournals.org

Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction

Takayuki Akaogi1,2,*, Kenji Tsuda2, Masami Terauchi2 and Michiyoshi Tanaka2

1 Asahi-Kasei Co. Ltd, 2-1 Samejima Fuji 416-8501, Japan
2 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan

*To whom correspondence should be addressed. E-mail: akaogi.tb{at}om.asahi-kasei.co.jp

All the six lattice parameters (a, b, c, {alpha}, ß and {gamma}) of a Si (001) layer grown on a sapphire (1Formula02) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in the Si (001) plane and an elongation in the [001] direction were revealed. An anisotropic lattice compression in the (001) plane was clearly detected for the first time. That is, the lattice compression in the Si [100] direction, which is parallel to the sapphire [Formula101] direction, was larger than that of the Si [010] direction, which is parallel to the sapphire [FormulaFormula20] direction. It was also revealed that the lattice parameters of the Si-layer depend on the distance from the interface. Anisotropy of carrier mobility was reasonably explained in terms of the anisotropy of the lattice parameters determined.

Keywords     lattice parameter determination, convergent-beam electron diffraction, lattice strain, SOS, Si on Sapphire, anisotropic lattice compression

Received      6 February 2006, accepted 8 June 2006


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