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Journal of Electron Microscopy Advance Access originally published online on November 28, 2006
Journal of Electron Microscopy 2006 55(5):261-263; doi:10.1093/jmicro/dfl031
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© The Author 2006. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please email: journals.permissions@oxfordjournals.org

Porous microstructures, obtained by oxidation of (In,Ga)2Se3 single crystals

O. A. Balitskii* and V. P. Savchyn

Department of Electronics, Lviv Ivan Franko National University Dragomanov strasse, 50, 79005, Lviv, Ukraine

*To whom correspondence should be addressed. E-mail: balitskii{at}electronics.wups.lviv.ua

Surface topology of thermally oxidized (In,Ga)2Se3 single crystals is discussed. It was established that own oxide surfaces possess morphologies of micropores network. The sizes of pores are in agreement of exponential empirical correlation versus oxidation temperature.

Keywords     microporous materials, transparent conductive oxides, electron microscopy

Received     13 February 2006, accepted 18 October 2006


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