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Journal of Electron Microscopy 2007 56(2):57-61; doi:10.1093/jmicro/dfm006
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© The Author 2007. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oxfordjournals.org

Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections

Kenji Tsuda1,*, Hajime Mitsuishi1, Masami Terauchi1 and Kazuo Kawamura2

1 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577
2 Fujitsu Ltd, 50 Fuchigami, Akiruno 197-0833, Japan

* To whom correspondence should be addressed. E-mail: k_tsuda{at}tagen.tohoku.ac.jp

Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.

Keywords     strain analysis, arsenic-doped Si, convergent-beam electron diffraction, rocking curves of low-order reflections

Received     20 January 2007, accepted 27 April 2007


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