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Journal of Electron Microscopy Advance Access originally published online on December 14, 2007
Journal of Electron Microscopy 2008 57(1):1-5; doi:10.1093/jmicro/dfm034
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© The Author 2007. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oxfordjournals.org

Sample Preparation of GaN-Based Materials on a Sapphire Substrate for STEM Analysis

Hanako Okuno, Masaki Takeguchi*, Kazutaka Mitsuishi, Xing J. Guo and Kazuo Furuya

National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan

* To whom correspondence should be addressed. E-mail: takeguchi.masaki{at}nims.go.jp

In this work, a detailed TEM sample preparation recipe based on a wedge polishing technique for GaN-based materials is presented. The obtained samples have atomically flat surfaces without any obvious surface damages such as the formation of amorphous layers. A composition estimation of AlxGa1–xN from Z-contrast STEM imaging is carried out using these samples. The results are in good accord with the nominal composition.

Keywords     sample preparation, scanning transmission electron microscopy, Z-contrast imaging

Received     14 June 2007, accepted 16 November 2007


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