Skip Navigation


Journal of Electron Microscopy Advance Access originally published online on January 5, 2008
Journal of Electron Microscopy 2008 57(1):13-18; doi:10.1093/jmicro/dfm037
This Article
Right arrow Full Text
Right arrow Full Text (PDF)
Right arrow All Versions of this Article:
57/1/13    most recent
dfm037v1
Right arrow Alert me when this article is cited
Right arrow Alert me if a correction is posted
Services
Right arrow Email this article to a friend
Right arrow Similar articles in this journal
Right arrow Similar articles in ISI Web of Science
Right arrow Similar articles in PubMed
Right arrow Alert me to new issues of the journal
Right arrow Add to My Personal Archive
Right arrow Download to citation manager
Right arrow Search for citing articles in:
ISI Web of Science (2)
Right arrowRequest Permissions
Google Scholar
Right arrow Articles by Yoo, J. H.
Right arrow Articles by Shindo, D.
Right arrow Search for Related Content
PubMed
Right arrow PubMed Citation
Right arrow Articles by Yoo, J. H.
Right arrow Articles by Shindo, D.
Social Bookmarking
Add to CiteULike   Add to Connotea   Add to Del.icio.us  
What's this?

© The Author 2008. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oxfordjournals.org

Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

Jung Ho Yoo1,*, Jun-Mo Yang1, Shaislamov Ulugbek1,**, Chi Won Ahn1, Wook-Jung Hwang1, Joong Keun Park2, Chul Min Park3, Seung Bum Hong3, Joong Jung Kim4 and Daisuke Shindo4

1 New Technology & Analysis Division, National Nanofab Center, Daejeon 305-806, Korea
2 Department of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
3 Semiconductor Device Lab, Samsung Advanced Institute of Technology, Yongin 446-712, Korea
4 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan

* To whom correspondence should be addressed. Tel: +82-42-879-9555; Fax: +82-42-879-9609; E-mail: jhyoo{at}nnfc.com

The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p–n junction, {Delta}Vp-n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, {Delta}Vp-n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.

Keywords     electron holography, quantitative analysis of 2D dopant profile, backside ion milling, p–n junction, electron energy-loss spectroscopy, focused ion beam

Received     16 September 2007, accepted 4 December 2007

** Shaislamov Ulugbek is doctoral course student of Kumoh National Institute of Technology, Gumi, 730-701, Korea.


Add to CiteULike CiteULike   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us    What's this?




Disclaimer: Please note that abstracts for content published before 1996 were created through digital scanning and may therefore not exactly replicate the text of the original print issues. All efforts have been made to ensure accuracy, but the Publisher will not be held responsible for any remaining inaccuracies. If you require any further clarification, please contact our Customer Services Department.