Skip Navigation

Journal of Electron Microscopy 2008 57(2):53-57; doi:10.1093/jmicro/dfn003
This Article
Right arrow Full Text
Right arrow Full Text (PDF)
Right arrow Alert me when this article is cited
Right arrow Alert me if a correction is posted
Services
Right arrow Email this article to a friend
Right arrow Similar articles in this journal
Right arrow Similar articles in ISI Web of Science
Right arrow Similar articles in PubMed
Right arrow Alert me to new issues of the journal
Right arrow Add to My Personal Archive
Right arrow Download to citation manager
Right arrowRequest Permissions
Google Scholar
Right arrow Articles by Kim, K. H.
Right arrow Articles by Shindo, D.
PubMed
Right arrow PubMed Citation
Right arrow Articles by Kim, K. H.
Right arrow Articles by Shindo, D.
Social Bookmarking
Add to CiteULike   Add to Connotea   Add to Del.icio.us  
What's this?

© The Author 2008. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oxfordjournals.org

Characterization of the charging effect in a ZrO2 sintered body by Ga ion beam irradiation

Ki Hyun Kim1, Joong Jung Kim1,3,, Toshiaki Suzuki2 and Daisuke Shindo1,*

1 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577 and
2 JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan
3 Present address: Initial Research Project, Okinawa Institute of Science and Technology, c/o Hitachi Advanced Research Laboratory, Akanuma 2520, Hatoyama, Saitama 350-0395, Japan

* To whom correspondence should be addressed. E-mail: shindo{at}tagen.tohoku.ac.jp

The charging effect in a ZrO2 sintered body was investigated by using scanning ion microscope (SIM) images. In this study, we report interesting features caused by the charging effect in the ZrO2 sintered body during the Ga ion beam irradiation: a bright contrast with a distorted net shape appears around the positively charged specimen. From this feature in the SIM image, it is clarified that the Ga ion beam is strongly deflected and the wide area of the internal parts of the focused ion beam machine is irradiated by the Ga ion beam, depending on the extent to which the specimen is charged. We discuss the mechanism of the characteristic charging effect through observing SIM images by varying the intensity of the Ga ion beam.

Keywords     charging effect, secondary electron, Ga ion beam irradiation, focused ion beam

Received     16 November 2007, accepted 31 January 2008


Add to CiteULike CiteULike   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us    What's this?




Disclaimer:
Please note that abstracts for content published before 1996 were created through digital scanning and may therefore not exactly replicate the text of the original print issues. All efforts have been made to ensure accuracy, but the Publisher will not be held responsible for any remaining inaccuracies. If you require any further clarification, please contact our Customer Services Department.