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Journal of Electron Microscopy Advance Access originally published online on October 11, 2008
Journal of Electron Microscopy 2008 57(6):181-187; doi:10.1093/jmicro/dfn019
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© The Author 2008. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oxfordjournals.org

Quantitative and easy estimation of a crystal bending effect using low-order CBED patterns

Takashi Yamazaki1,*, Akihiro Kashiwagi1, Koji Kuramochi1, Masahiro Ohtsuka1, Iwao Hashimoto1 and Kazuto Watanabe2

1 Department of Physics, Tokyo University of Science
2 Tokyo Metropolitan College of Industrial Technology, Tokyo, Japan

* To whom correspondence should be addressed. E-mail: yamazaki{at}rs.kagu.tus.ac.jp

The quantitative measurement of a crystal bending effect is performed using low-order zone-axis convergent beam electron diffraction (CBED) patterns. Although the accuracy of the present method is inferior to that of the method of using split higher order Laue zone lines, this method enables us to estimate the crystal bending effect at a region very close to the interface and to easily judge whether the crystal bending effect results in a tensile bend or a compressive bend. As an application of the present method, the crystal bending effect at a region close to the SiGe/Si interface was measured. It was found that the crystal bending effect is due to a thin-foil relaxation of almost 0.3° at a region that is ~10 nm away from the interface.

Keywords     crystal bending effect, CBED, dynamical simulation, split HOLZ lines, SiGe

Received     17 March 2008, accepted 16 September 2008


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