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Journal of Electron Microscopy Advance Access originally published online on December 12, 2008
Journal of Electron Microscopy 2009 58(3):185-191; doi:10.1093/jmicro/dfn026
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© The Author 2008. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oxfordjournals.org

This article appears in the following Journal of Electron Microscopy issue: Special number: Advanced electron microscopy in materials physics [View the issue table of contents]

Aberration-corrected Z-contrast imaging of SrTiO3 dislocation cores

R. F. Klie*, W. Walkosz, G. Yang and Y. Zhao

Department of Physics, University of Illinois at Chicago, Chicago, IL 60607, USA

* To whom correspondence should be addressed. E-mail: rfklie{at}uic.edu.gov

Many fundamental problems in materials science, physics, and particular nanotechnology rely on the direct determination and characterization of atomic arrangements and electronic environments of individual interfaces or defects. In this paper, we will show how aberration-corrected Z-contrast imaging in combination with electron energy-loss spectroscopy can be used to directly measure the local atomic and electronic structures of dislocation cores in low-angle SrTiOFormula [001] tilt grain boundaries. In particular, we will study two types of dislocation cores in a 3Formula tilt grain boundary, a pure edge dislocation, and a dissociated dislocation core. While it is energetically favorable for an edge dislocation to dissociate into two partial dislocations in such a low-angle grain boundary, we can find pure edge dislocations that show a higher O vacancy concentration than the dissociated cores. We suggest that the increased oxygen vacancy concentration might help stabilizing the pure edge dislocations in 3° tilt grain boundaries of SrTiOFormula .

Keywords     STEM, EELS, grain boundary, SrTiO3

Received      1 August 2008, accepted 12 November 2008


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