Skip Navigation

This Article
Right arrow Full Text (PDF)
Right arrow Alert me when this article is cited
Right arrow Alert me if a correction is posted
Services
Right arrow Email this article to a friend
Right arrow Similar articles in this journal
Right arrow Alert me to new issues of the journal
Right arrow Add to My Personal Archive
Right arrow Download to citation manager
Right arrowRequest Permissions
Google Scholar
Right arrow Articles by Song, M.
Right arrow Articles by Noda, T.
Right arrow Search for Related Content
PubMed
Right arrow Articles by Song, M.
Right arrow Articles by Noda, T.
Social Bookmarking
Add to CiteULike   Add to Connotea   Add to Del.icio.us  
What's this?

Journal of Electron Microscopy 48(4): 355-360 (1999)
© 1999 Oxford University Press

High-resolution electron microscopy study of defect structures in {gamma}-TiAl irradiated with 15 keV He ions in a high-voltage transmission electron microscope

Minghui Song*, Kazuo Furuya, Tatsuhiko Tanabe and Tetsuji Noda

National Research Institute for Metals 3-13 Sakura, Tsukuba 305-0003, Japan

*To whom correspondence should be addressed. E-mail: msong{at}nrim.go.jp

{gamma}-TiAl intermetallic alloy specimens were irradiated with 15 keV He ions to a dose of 8.6×1020 ions m–2 (4.6 dpa, averaged in the range of the irradiation damage distribution in depth from 0 to 240 nm) in a high-voltage transmission electron microscope (HVTEM) at room temperature. The defect clusters formed during the ion irradiation were characterized with high-resolution transmission electron microscopy (HRTEM). Induced defect clusters are mainly planar defects and rotated domains (RDs). The planar defects have the edges parallel to {111) of the matrix and several nanometers in size. They are formed during ion irradiation and remain stable even after annealing and correspond to the bright streaks along <111] in selected area diffraction (SAD) patterns of the ion-irradiated specimens. The RDs, which are rotated 90° to the matrix, are formed in as-irradiated and post-irradiation annealed specimens. They are identified by the appearance of super-lattice reflection spots in SAD pattern and by image contrast in HRTEM observation as well. Post-irradiation annealing at 673 K for 30 min enhanced the formation of the RD. The mechanism of formation of the RD is discussed.

Keywords     He ion irradiation, {gamma}-TiAl, irradiation defect, rotated domain, high-resolution electron microscopy

Received     11 January 1999, accepted 6 April 1999


Add to CiteULike CiteULike   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us    What's this?




Disclaimer: Please note that abstracts for content published before 1996 were created through digital scanning and may therefore not exactly replicate the text of the original print issues. All efforts have been made to ensure accuracy, but the Publisher will not be held responsible for any remaining inaccuracies. If you require any further clarification, please contact our Customer Services Department.