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Journal of Electron Microscopy Advance Access originally published online on March 29, 2006
Journal of Electron Microscopy 2006 55(1):7-12; doi:10.1093/jmicro/dfi075
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Published by Oxford University Press on behalf of Japanese Society of Microscopy 2006

Depth sectioning of aligned crystals with the aberration-corrected scanning transmission electron microscope

Albina Y. Borisevich1,*, Andrew R. Lupini1, Samuel Travaglini2 and Stephen J. Pennycook1

1 Condensed Matter Sciences Division, Oak Ridge National Laboratory Oak Ridge, TN, USA
2 Mathematics Department, Harding University Searcy, AR, USA

*To whom correspondence should be addressed. E-mail: albinab{at}ornl.gov

The implementation of aberration correction for the scanning transmission electron microscope (STEM) enables the use of larger probe-forming apertures, improving the transverse resolution significantly and also bringing depth resolution at the nanometer scale. This opens up the possibility of three-dimensional imaging by optical sectioning, and nanometer-scale depth resolution has been demonstrated for amorphous and off-axis samples. For crystalline materials it is usual to image in a zone axis orientation to achieve atomic resolution. In this case, the tendency for the beam to channel along the columns complicates the simple optical sectioning technique. Here we conduct a series of simulations which demonstrate that higher beam convergence angles available in next generation aberration correctors can overcome this limitation. Detailed simulations with realistic values for residual aberrations predict nanometer-scale depth resolution for Bi dopant atoms in Si (110) for an instrument corrected up to fifth order. Use of a monochromator appears to significantly improve the depth resolution.

Keywords     depth sectioning, electron channeling, aberration correction, scanning transmission electron microscopy

Received     19 August 2005, accepted 19 January 2006


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