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Journal of Electron Microscopy Advance Access published online on December 22, 2005
Journal of Electron Microscopy, doi:10.1093/jmicro/dfi067
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Published by Oxford University Press on behalf of Japanese Society of Microscopy 2005
Received September 8, 2005
Accepted November 17, 2005

Full-length paper

Matrix-dependent structure of GeSi nanocrystals in SiC

Johannes Biskupek 1 *, Ute Kaiser 1, and Konrad Gärtner 2

1 Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany
2 Institute of Solid State Physics, Friedrich Schiller University, 07743 Jena, Germany

* To whom correspondence should be addressed.
Johannes Biskupek, E-mail: johannes.biskupek{at}uni-ulm.de


  Abstract

It is shown experimentally that GeSi nanocrystals in SiC created after high-dose Ge ion implantation and high-temperature annealing are hexagonal in a hexagonal 4H-SiC matrix and are of cubic structure in a cubic 3C-SiC matrix. This interesting fact could be explained by molecular dynamics as the force of the system nanocrystal-matrix to minimize its interface energy.

Keywords: HRTEM; Molecular Dynamics; Nanocrystals; Silicon Carbide.
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