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Journal of Electron Microscopy Advance Access published online on March 23, 2006
Journal of Electron Microscopy, doi:10.1093/jmicro/dfi077
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© The Author 2006. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For Permissions, please email: journals.permissions@oxfordjournals.org

Article

Synthesis and microstructure of Cd4SiS6/Si composite nanowires

Jinhua Zhan 1 *, Yoshio Bando 2, Junqing Hu 3, and Dmitri Golberg 1

1 Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
2 Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; International Center for Young Scientists (ICYS) National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
3 International Center for Young Scientists (ICYS) National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

* To whom correspondence should be addressed.
Jinhua Zhan, E-mail: ZHAN.Jinhua{at}nims.go.jp


  Abstract

Cd4SiS6/Si composite nanowires are produced through co-thermal evaporation of CdS and Si powders with a small amount of tin sulfide as an additive. A vapor-liquid-solid growth mechanism is proposed for the anisotropic growth of the composite nanowires based on the presence of metallic tin particles at their tip-ends. Both side-by-side and core-shell composite nanowires are obtained. The product is characterized using X-ray powder diffraction and scanning electron microscopy. Detailed structural and chemical analyses of individual composite nanowires are carried out using transmission electron microscopy (TEM), high-resolution TEM (HRTEM), electron diffraction (ED) and energy-dispersive X-ray spectroscopy. Planar defects, including microtwins and stacking faults, are abundant in a Si core, as revealed by HRTEM and selected-area ED. The formation of composite nanowires is discussed in the light of thermodynamic and kinetic aspects.

Keywords: semiconductors; nanowires; composite; silicon; cadmium sulfide; thermal evaporation.
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