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Journal of Electron Microscopy Advance Access published online on November 28, 2006
Journal of Electron Microscopy, doi:10.1093/jmicro/dfl031
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© The Author 2006. Published by Oxford University Press on behalf of Japanese Society of Microscopy. All rights reserved. For Permissions, please email: journals.permissions@oxfordjournals.org
Received February 13, 2006
Accepted October 18, 2006

Letter: Physical

Porous microstructures, obtained by oxidation of (In,Ga)2Se3 single crystals

O. A. Balitskii 1 * and V. P. Savchyn 1

1 Department of Electronics, Lviv Ivan Franko National University, Dragomanov strasse, 50, 79005, Lviv, Ukraine

* To whom correspondence should be addressed.
O. A. Balitskii, E-mail: balitskii{at}electronics.wups.lviv.ua


  Abstract

Surface topology of thermally oxidized (In,Ga)2Se3 single crystals is discussed. It was established that own oxide surfaces possess morphologies of micropores network. The sizes of pores are in agreement of exponential empirical correlation versus oxidation temperature.

Keywords: microporous materials; transparent conductive oxides; electron microscopy.
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